The effect of the Si/N treatment of a nitridated sapphire surface on the growth mode of GaN in low-pressure metalorganic vapor phase epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.122148
Reference12 articles.
1. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
2. GaN Growth Using GaN Buffer Layer
3. High dislocation densities in high efficiency GaN‐based light‐emitting diodes
4. Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy
5. Dislocation density reduction via lateral epitaxy in selectively grown GaN structures
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