Improving InGaN-LED performance by optimizing the patterned sapphire substrate shape
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Reference23 articles.
1. High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures
2. GaN-based violet laser diodes grown on free-standing GaN substrate
3. Pendeoepitaxy of gallium nitride thin films
4. Improved light extraction of GaN-based light-emitting diodes with surface-textured indium tin oxide electrodes by nickel nanoparticle mask dry-etching
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1. Wafer-scale heteroepitaxy GaN film free of high-density dislocation region with hexagonal 3D serpentine mask;Applied Surface Science Advances;2023-10
2. Efficiency enhancement mechanism of piezoelectric effect in long wavelength InGaN-based LED;Physical Chemistry Chemical Physics;2023
3. GaN nucleation on patterned sapphire substrate with different shapes for improved GaN overgrowth;Vacuum;2022-03
4. Cathodoluminescent Analysis of Sapphire Surface Etching Processes in a Medium-Energy Electron Beam;Materials;2022-02-11
5. Design of patterned sapphire substrates in flip-chip LEDs for improvement of light-extraction efficiencies;Optical and Quantum Electronics;2018-03
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