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Extremely Slow Decay of Yellow Luminescence in Be-Doped GaN and Its Identification

  • Published:2018-08-13 Issue:10 Volume:255 Page:1800126
  • ISSN:0370-1972
  • Container-title:physica status solidi (b)
  • language:en
  • Short-container-title:Phys. Status Solidi B

Author:

Lamprecht Matthias1ORCID,Thonke Klaus1,Teisseyre Henryk23,Boćkowski Michał3

Affiliation:

1. Institute of Quantum Matter/Semiconductor Physics Group; University of Ulm; Albert-Einstein-Allee 45 Ulm 89069 Germany

2. Institute of Physics; Polish Academy of Sciences; Al. Lotników 32/34 Warsaw 02-668 Poland

3. Institute of High Pressure; Polish Academy of Sciences; Sokoł owska 29/37 Warsaw 01-142 Poland

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The Origin of the Yellow Luminescence Band in Be-Doped Bulk GaN;Solids;2024-01-04

2. Photoluminescence from defects in GaN;Gallium Nitride Materials and Devices XVIII;2023-03-15

3. Photoluminescence from Be‐Doped GaN Grown by Metal‐Organic Chemical Vapor Deposition;physica status solidi (b);2022-12-13

4. Thermal annealing of GaN implanted with Be;Journal of Applied Physics;2022-03-28

5. Point defects in beryllium-doped GaN;Physical Review B;2021-12-08
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