Crystalline ZrO2-gated Ge metal-oxide-semiconductor capacitors fabricated on Si substrate with Y2O3 as passivation layer
Author:
Funder
National Science Council Taiwan
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3590923
Reference23 articles.
1. Higher permittivity rare earth doped HfO2 for sub-45-nm metal-insulator-semiconductor devices
2. Stabilization of very high-k tetragonal phase in Ge-doped ZrO2 films grown by atomic oxygen beam deposition
3. Tetragonal $\hbox{ZrO}_{2}/\hbox{Al}_{2}\hbox{O}_{3}$ Stack as High-$\kappa$ Gate Dielectric for Si-Based MOS Devices
4. Very high-κ ZrO2 with La2O3 (LaGeOx) passivating interfacial layers on germanium substrates
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