Stabilization of very high-k tetragonal phase in Ge-doped ZrO2 films grown by atomic oxygen beam deposition-Reference-Cited by-同舟云学术

Stabilization of very high-k tetragonal phase in Ge-doped ZrO2 films grown by atomic oxygen beam deposition

Published:2009-07-15 Issue:2 Volume:106 Page:024107
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Tsoutsou D.,Apostolopoulos G.,Galata S. F.,Tsipas P.,Sotiropoulos A.,Mavrou G.,Panayiotatos Y.,Dimoulas A.,Lagoyannis A.,Karydas A. G.,Kantarelou V.,Harissopoulos S.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3182636

Reference21 articles.

1. Maximizing performance for higher K gate dielectrics

2. High-κ Dielectric Materials for Microelectronics

3. A Thermodynamic Approach to Selecting Alternative Gate Dielectrics

4. Phonons and lattice dielectric properties of zirconia

5. Structural, electronic, and dielectric properties of amorphousZrO2fromab initiomolecular dynamics

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