Tetragonal $\hbox{ZrO}_{2}/\hbox{Al}_{2}\hbox{O}_{3}$ Stack as High-$\kappa$ Gate Dielectric for Si-Based MOS Devices-Reference-Cited by-同舟云学术

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Tetragonal $\hbox{ZrO}_{2}/\hbox{Al}_{2}\hbox{O}_{3}$ Stack as High-$\kappa$ Gate Dielectric for Si-Based MOS Devices

Published:2010-09 Issue:9 Volume:31 Page:1014-1016
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Wu Yung-Hsien,Chen Lun-Lun,Lyu Rong-Jhe,Li Ming-Yen,Wu Hsiao-Che

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/5556401/05512593.pdf?arnumber=5512593

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