Deep insights into electrical parameters due to metal gate WFV for different gate oxide thickness in Si step FinFET-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Deep insights into electrical parameters due to metal gate WFV for different gate oxide thickness in Si step FinFET

Published:2019-04 Issue:4 Volume:14 Page:384-388
ISSN:1750-0443
Container-title:Micro & Nano Letters
language:en
Short-container-title:Micro & Nano Letters

Author:

Saha Rajesh¹,Bhowmick Brinda²,Baishya Srimanta²^ORCID

Affiliation:

1. Electronics and Communication Engineering DepartmentVellore Institute of Technology Andhra PradeshAmravati522 237Andhra PradeshIndia

2. Department of Electronics and Communication EngineeringNational Institute of Technology SilcharSilchar788 010India

Funder

Bangladesh Council of Scientific and Industrial Research

Publisher

Institution of Engineering and Technology (IET)

Subject

Condensed Matter Physics,General Materials Science,Biomedical Engineering,Bioengineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/mnl.2018.5220

Reference24 articles.

1. Effects of fin width on high‐ κ /metal gate bulk FinFET devices

2. FinFETs: From Devices to Architectures

3. Random Dopant Fluctuation in Limited-Width FinFET Technologies

4. Interactions Between Line Edge Roughness and Random Dopant Fluctuation in Nonplanar Field-Effect Transistor Variability

5. MigitaS.WatanabeY.OtaH.et al.: ‘Design and demonstration of very high‐k(k∼50) HfO2for ultra‐scaled Si CMOS’.Symp. VLSI Technology Honolulu HI August2008 pp.152–153

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of Stacked Work Function Metals on Gate Stress Reliability of n- and p-FinFETs;IEEE Transactions on Electron Devices;2023-08

2. Study on induced work-function variation of titanium metal gate on various electrical parameters for delta-doped layer germanium source vertical tunnel FET;Journal of Computational Electronics;2021-03-15

3. Modifying Threshold Voltages to n- and p- Type FinFETs by Work Function Metal Stacks;IEEE Open Journal of Nanotechnology;2021

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3