High-K Gate Dielectrics Treated with in Situ Atomic Layer Bombardment
Author:
Affiliation:
1. Department of Materials Science and Engineering, National Taiwan University, Taipei 10617, Taiwan
Funder
Ministry of Science and Technology, Taiwan
Publisher
American Chemical Society (ACS)
Subject
Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/acsaelm.9b00080
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1. High dielectric constant gate oxides for metal oxide Si transistors
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