Effect of plasma N2 and thermal NH3 nitridation in HfO2 for ultrathin equivalent oxide thickness-Reference-Cited by-同舟云学术

Effect of plasma N2 and thermal NH3 nitridation in HfO2 for ultrathin equivalent oxide thickness

Published:2013-01-28 Issue:4 Volume:113 Page:044103
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Dai Min,Wang Yanfeng,Shepard Joseph,Liu Jinping,Brodsky Maryjane,Siddiqui Shahab,Ronsheim Paul,Ioannou Dimitris P,Reddy Chandra,Henson William,Krishnan Siddarth,Narayanan Vijay,Chudzik Michael P

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4775817

Reference20 articles.

1. Interface model for HfO2 gate stack from first principles calculations and its application to nanoscale device simulations

2. High-κ gate dielectrics: Current status and materials properties considerations

3. Interfacial layer growth condition dependent carrier transport mechanisms in HfO2/SiO2 gate stacks

4. Effects of N2 remote plasma nitridation on the structural and electrical characteristics of the HfO2 gate dielectrics grown using remote plasma atomic layer deposition methods

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