Interfacial layer growth condition dependent carrier transport mechanisms in HfO2/SiO2 gate stacks
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4726186
Reference22 articles.
1. Thermodynamic stability of high-K dielectric metal oxides ZrO2 and HfO2 in contact with Si and SiO2
2. Changes in the leakage currents in Ba0.8Sr0.2TiO3∕ZrO2 multilayers due to modulations in oxygen concentration
3. Leakage mechanism of Ba0.8Sr0.2TiO3/ZrO2 multilayer thin films
4. Improved dielectric properties and their temperature insensitivity in multilayered Ba0.8Sr0.2TiO3/ZrO2 thin films
5. dc leakage behavior in vanadium-doped bismuth titanate thin films
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