Higher permittivity rare earth doped HfO2 for sub-45-nm metal-insulator-semiconductor devices-Reference-Cited by-同舟云学术

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Higher permittivity rare earth doped HfO2 for sub-45-nm metal-insulator-semiconductor devices

Published:2007-08-06 Issue:6 Volume:91 Page:062906
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Govindarajan S.,Böscke T. S.,Sivasubramani P.,Kirsch P. D.,Lee B. H.,Tseng H.-H.,Jammy R.,Schröder U.,Ramanathan S.,Gnade B. E.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2768002

Reference18 articles.

1. Ultrascaled hafnium silicon oxynitride gate dielectrics with excellent carrier mobility and reliability

2. Effective Electron Mobility Reduced by Remote Charge Scattering in High-κ Gate Stacks

3. Band offsets of wide-band-gap oxides and implications for future electronic devices

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