Very high-κ ZrO2 with La2O3 (LaGeOx) passivating interfacial layers on germanium substrates
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3033546
Reference17 articles.
1. High-k/Ge MOSFETs for future nanoelectronics
2. Interface engineering for Ge metal-oxide–semiconductor devices
3. Electrical properties of La2O3 and HfO2∕La2O3 gate dielectrics for germanium metal-oxide-semiconductor devices
4. Improvement of interfacial properties with interfacial layer in La2O3/Ge structure
5. Germanium metal-insulator-semiconductor capacitors with rare earth La2O3 gate dielectric
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