Influence of the atomic layer deposition temperature on the structural and electrical properties of Al/Al2O3/p-Ge MOS structures-Reference-Cited by-同舟云学术

Influence of the atomic layer deposition temperature on the structural and electrical properties of Al/Al2O3/p-Ge MOS structures

Published:2018-01 Issue:1 Volume:36 Page:01A120
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Botzakaki Martha A.¹,Skoulatakis George²,Xanthopoulos Nikolaos¹,Gianneta Violetta,Travlos Anastasios,Kennou Stella,Ladas Spyridon,Tsamis Christos,Makarona Eleni,Georga Stavroula N.,Krontiras Christoforos A.

Affiliation:

1. Department of Physics, University of Patras, 26504 Rio-Patras, Greece

2. Department of Chemical Engineering, University of Patras, 26504 Rio-Patras, Greece

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.5003375

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