Absence of carrier recombination associated with the defect pool model in intrinsic amorphous silicon layers: Evidence from current–voltage characteristics on p–i–n and n–i

Absence of carrier recombination associated with the defect pool model in intrinsic amorphous silicon layers: Evidence from current–voltage characteristics on p–i–n and n–i–p solar cells

Published:2003-05-05 Issue:18 Volume:82 Page:3023-3025
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Deng J.,Pearce J. M.,Koval R. J.,Vlahos V.,Collins R. W.,Wronski C. R.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1571985

Reference11 articles.

1. Physics of amorphous silicon alloyp‐i‐nsolar cells

2. More Insights into Band Gap Graded a-SiGe:H Solar Cells by Experimental and Simulated Data

3. Defect-pool model and the hydrogen density of states in hydrogenated amorphous silicon

4. Spatial effects on ideality factor of amorphous siliconpindiodes

5. Performance and stability of Si:H p–i–n solar cells with i layers prepared at the thickness-dependent amorphous-to-microcrystalline phase boundary

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