First principles design of Ohmic spin diodes based on quaternary Heusler compounds
Author:
Affiliation:
1. Institute of Physics, Martin Luther University Halle-Wittenberg, D-06120 Halle (Saale), Germany
2. Max Planck Institute of Microstructure Physics, Weinberg 2, D-06120 Halle (Saale), Germany
Funder
European Union
Deutsche Forschungsgemeinschaft
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
https://aip.scitation.org/doi/pdf/10.1063/5.0037085
Reference30 articles.
1. New Class of Materials: Half-Metallic Ferromagnets
2. Slater-Pauling behavior in LiMgPdSn-type multifunctional quaternary Heusler materials: Half-metallicity, spin-gapless and magnetic semiconductors
3. Spin-filter and spin-gapless semiconductors: The case of Heusler compounds
4. High-throughput screening for spin-gapless semiconductors in quaternary Heusler compounds
5. Realization of Spin Gapless Semiconductors: The Heusler CompoundMn2CoAl
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