Analysis of bulk and interface defects in hydrogenated amorphous silicon solar cells by Fourier transform photocurrent spectroscopy-Reference-Cited by-同舟云学术

Analysis of bulk and interface defects in hydrogenated amorphous silicon solar cells by Fourier transform photocurrent spectroscopy

Published:2015-11-14 Issue:18 Volume:118 Page:184506
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Bidiville A.¹,Matsui T.¹,Matsubara K.¹

Affiliation:

1. Research Center for Photovoltaics, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan

Funder

New Energy and Industrial Technology Development Organization (NEDO)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4935621

Reference40 articles.

1. Reversible conductivity changes in discharge‐produced amorphous Si

2. High-efficiency amorphous silicon solar cells: Impact of deposition rate on metastability

3. Remarkable progress in thin-film silicon solar cells using high-efficiency triple-junction technology

4. Triple-junction thin-film silicon solar cell fabricated on periodically textured substrate with a stabilized efficiency of 13.6%

5. Light-induced metastable defects in hydrogenated amorphous silicon: A systematic study

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