Role of the Fermi level in the formation of electronic band-tails and mid-gap states of hydrogenated amorphous silicon in thin-film solar cells-Reference-Cited by-同舟云学术

Role of the Fermi level in the formation of electronic band-tails and mid-gap states of hydrogenated amorphous silicon in thin-film solar cells

Published:2017-09-07 Issue:9 Volume:122 Page:093101
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Bidiville A.¹,Matsui T.¹,Sai H.¹^ORCID,Matsubara K.¹

Affiliation:

1. Research Center for Photovoltaics, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan

Funder

New Energy and Industrial Technology Development Organization (NEDO)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4989425

Reference50 articles.

1. High-efficiency amorphous silicon solar cells: Impact of deposition rate on metastability

2. Chemical-equilibrium description of the gap-state distribution ina-Si:H

3. Thermal bias annealing evidence for the defect pool in amorphous silicon thin‐film transistors

4. Defect pool in amorphous-silicon thin-film transistors

5. Improved defect-pool model for charged defects in amorphous silicon

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