Thermal bias annealing evidence for the defect pool in amorphous silicon thin‐film transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.103452
Reference5 articles.
1. Evidence for the defect pool concept for Si dangling bond states in a-Si:H from experiments with thin film transistors
2. The origin of metastable states in a-Si:H
3. Material Properties Controlling the Performance of Amorphous Silicon Thin Film Transistors
4. Undoped Amorphous Silicon TFTs with n-Channel OR p-Channel Device Operation for the Determination of the Gap States Distribution.
5. Creation of near-interface defects in hydrogenated amorphous silicon-silicon nitride heterojunctions: The role of hydrogen
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1. Role of the Fermi level in the formation of electronic band-tails and mid-gap states of hydrogenated amorphous silicon in thin-film solar cells;Journal of Applied Physics;2017-09-07
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4. Determination of the contribution of defect creation and charge trapping to the degradation of a-Si:H/SiN TFTs at room temperature and low voltages;Journal of Non-Crystalline Solids;2006-10
5. Turnaround Phenomenon of Threshold Voltage Shifts in Amorphous Silicon Thin Film Transistors under Negative Bias Stress;Japanese Journal of Applied Physics;2000-10-15
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