More Insights into Band Gap Graded a-SiGe:H Solar Cells by Experimental and Simulated Data

Abstract

ABSTRACTAn experimental and numerical study of a-SiGe:H based solar cells with band gap graded i-layer in the shape of a ‘V’ is presented. The variation of the location of the band gap minimum has strong influence on the solar cell performance. Comparisons of experimental and simulated data of the dark IV-behavior, IV-curves under illumination and the quantum efficiency allow insights into the transport and recombination behavior within the solar cell. The simulations reveal that the position as well as the charge state of the defects determine the device characteristics.