Improved analysis of the constant photocurrent method-Reference-Cited by-同舟云学术

Improved analysis of the constant photocurrent method

Published:1995-11 Issue:5 Volume:72 Page:489-504
ISSN:1364-2812
Container-title:Philosophical Magazine B
language:en
Short-container-title:Philosophical Magazine B

Author:

Stiebig H.¹,Siebke F.¹

Affiliation:

1. a Forschungszentrum Jülich GmbH, Institute of Thin Film and Ion Technology (ISI-PV) , PO Box 1913, D-52425 , Julich , Germany

Publisher

Informa UK Limited

Subject

General Physics and Astronomy,General Chemical Engineering

Link

https://www.tandfonline.com/doi/pdf/10.1080/13642819508239100

Reference25 articles.

1. Structure and Electronic States in Disordered Systems

2. Brandt , M. S. Asand , A. and Stutzmann , M. Materials Research Society Symposium Proceedings. Vol. 297, pp.201Pittsburgh, Pennsylvania: Materials Research Society.

3. Interpretation of CPM measurements in amorphous semiconductors

4. Direct measurement of gap-state absorption in hydrogenated amorphous silicon by photothermal deflection spectroscopy

5. Energy dependence of the optical matrix element in hydrogenated amorphous and crystalline silicon

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5. Light-induced creation of metastable defects in hydrogenated amorphous silicon studied by computer simulations of constant photocurrent measurements;Physical Review B;1999-02-15