High-quality hydrogenated intrinsic amorphous silicon oxide layers treated by H2 plasma used as the p/i buffer layers in hydrogenated amorphous silicon solar cells-Reference-Cited by-同舟云学术

High-quality hydrogenated intrinsic amorphous silicon oxide layers treated by H2 plasma used as the p/i buffer layers in hydrogenated amorphous silicon solar cells

Published:2015-05 Issue: Volume:136 Page:172-176
ISSN:0927-0248
Container-title:Solar Energy Materials and Solar Cells
language:en
Short-container-title:Solar Energy Materials and Solar Cells

Author:

Fang Jia,Chen Ze,Hou Guofu,Wang Fengyou,Chen Xinliang,Wei Changchun,Wang Guangcai,Sun Jian,Zhang Dekun,Zhao Ying,Zhang Xiaodan

Funder

National Basic Research Program of China

Science and Technology Support Program of Tianjin

Major Science and Technology Support Project of Tianjin City

Hi-Tech Research and Development Program of China

International Cooperation Projects of the Ministry of Science and Technology

the National Natural Science Fund

Tianjin Applied Basic Research Project and Cutting-edge Technology Research Plan

Specialized Research Fund for the Doctor Program of Higher Education

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

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4. Mixed-phase p-type silicon oxide containing silicon nanocrystals and its role in thin-film silicon solar cells;Cuony;Appl. Phys. Lett.,2010

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