Understanding time-resolved processes in atomic-layer etching of ultra-thin Al2O3 film using BCl3 and Ar neutral beam-Reference-Cited by-同舟云学术

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Understanding time-resolved processes in atomic-layer etching of ultra-thin Al2O3 film using BCl3 and Ar neutral beam

Published:2014-09 Issue:9 Volume:105 Page:093104
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Jhon Young I.¹,Min Kyung S.²,Yeom G. Y.²³,Jhon Young Min¹

Affiliation:

1. Sensor System Research Center, Korea Institute of Science and Technology, Seoul 136-791, South Korea

2. Department of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do 440-746, South Korea

3. SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University, Suwon 440-746, South Korea

Funder

Ministry of Education, Republic of Korea (Ministry of Education, Science and Technology)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4894523

Reference25 articles.

1. Plasma charging damage on MOS devices with gate insulator of high-dielectric constant material

2. Plasma-Induced Damage in High-$k$/Metal Gate Stack Dry Etch

3. TaN metal gate damage during high-k (Al2O3) high-temperature etch

4. Atomic layer etching of InP using a low angle forward reflected Ne neutral beam

5. Atomic layer etching of graphene for full graphene device fabrication

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1. Scaling of atomic layer etching of SiO2 in fluorocarbon plasmas: Transient etching and surface roughness;Journal of Vacuum Science & Technology A;2021-05

2. Mechanism of highly selective SiO2 etching over Si3N4 using a cyclic process with BCl3 and fluorocarbon gas chemistries;Journal of Vacuum Science & Technology A;2020-03

3. Facile large-area fabrication of highly selective and permeable few-layered graphene: A molecular dynamics study;Carbon;2019-12

4. Isotropic Atomic Layer Etching of ZnO Using Acetylacetone and O2 Plasma;ACS Applied Materials & Interfaces;2018-10-04

5. Highly selective SiO2etching over Si3N4using a cyclic process with BCl3and fluorocarbon gas chemistries;Japanese Journal of Applied Physics;2018-04-25

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