Mechanism of highly selective SiO2 etching over Si3N4 using a cyclic process with BCl3 and fluorocarbon gas chemistries-Reference-Cited by-同舟云学术

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Mechanism of highly selective SiO2 etching over Si3N4 using a cyclic process with BCl3 and fluorocarbon gas chemistries

Published:2020-03 Issue:2 Volume:38 Page:023004
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A
language:en
Short-container-title:Journal of Vacuum Science & Technology A

Author:

Matsui Miyako¹,Usui Tatehito¹,Kuwahara Kenichi²

Affiliation:

1. Research & Development Group, Hitachi, Ltd., 1-280, Higashi-koigakubo, Kokubunji, Tokyo 185-8601, Japan

2. Kasado Design and Production Division, Hitachi High-Technologies Corporation, 794, Higashitoyoi, Kudamatsu, Yamaguchi 744-0002, Japan

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.5129568

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Mechanism of highly selective etching of SiCN by using NF3/Ar-based plasma;Journal of Vacuum Science & Technology A;2021-07

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