Atomic layer etching of graphene for full graphene device fabrication-Reference-Cited by-同舟云学术

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Atomic layer etching of graphene for full graphene device fabrication

Published:2012-02 Issue:2 Volume:50 Page:429-435
ISSN:0008-6223
Container-title:Carbon
language:en
Short-container-title:Carbon

Author:

Lim Woong Sun,Kim Yi Yeon,Kim Hyeongkeun,Jang Sukjae,Kwon Namyong,Park Beyoung Jae,Ahn Jong-Hyun,Chung Ilsub,Hong Byung Hee,Yeom Geun Young

Publisher

Elsevier BV

Subject

General Chemistry,General Materials Science

Reference19 articles.

1. The rise of graphene;Geim;Nat Mater,2007

2. Control of graphene’s properties by reversible hydrogenation: evidence for graphene;Elias;Science,2009

3. Measurement of the elastic properties and intrinsic strength of monolayer graphene;Lee;Science,2008

4. Impermeable atomic membranes from graphene sheets;Bunch;Nano Lett,2008

5. Large-scale pattern growth of graphene films for stretchable transparent electrodes;Kim;Nature,2009

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1. Selective removal of single-layer graphene over double-layer graphene on SiO2 by remote oxygen plasma irradiation;Applied Surface Science;2024-10

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3. Layer-by-layer thinning of two-dimensional materials;Chemical Society Reviews;2024

4. Art etching of graphene;Nanoscale Horizons;2024

5. Atomic Layer Etching Applications in Nano-Semiconductor Device Fabrication;Electronic Materials Letters;2023-03-11

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