TaN metal gate damage during high-k (Al2O3) high-temperature etch-Reference-Cited by-同舟云学术

TaN metal gate damage during high-k (Al2O3) high-temperature etch

Published:2009-04 Issue:4-6 Volume:86 Page:949-952
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Paul J.,Beyer V.,Michalowski P.,Beug M.F.,Bach L.,Ackermann M.,Wege S.,Tilke A.,Chan N.,Mikolajick T.,Bewersdorff-Sarlette U.,Knöfler R.,Czernohorsky M.,Ludwig C.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference18 articles.

1. Comparative study on methods to structure sapphire

2. Fast etching of sapphire by a visible range quasi-cw laser radiation

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