Correlation between the macroscopic ferroelectric material properties of Si:HfO2and the statistics of 28 nm FeFET memory arrays-Reference-Cited by-同舟云学术

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Correlation between the macroscopic ferroelectric material properties of Si:HfO2and the statistics of 28 nm FeFET memory arrays

Published:2016-05-05 Issue:1 Volume:497 Page:42-51
ISSN:0015-0193
Container-title:Ferroelectrics
language:en
Short-container-title:Ferroelectrics

Author:

Mueller S.,Slesazeck S.,Henker S.,Flachowsky S.,Polakowski P.,Paul J.,Smith E.,Müller J.,Mikolajick T.

Publisher

Informa UK Limited

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://www.tandfonline.com/doi/pdf/10.1080/00150193.2016.1162021

Reference20 articles.

1. A Fully Functional 64 Mb DDR3 ST-MRAM Built on 90 nm CMOS Technology

2. A 20nm 1.8V 8Gb PRAM with 40MB/s program bandwidth

3. A 130.7-$\hbox{mm}^{2}$ 2-Layer 32-Gb ReRAM Memory Device in 24-nm Technology

4. Ferroelectric memories

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1. Performance Measurement and Analysis of Hafnium-Oxide Ferroelectric Field Effect Transistors on Silicon Substrate;2023 International Conference on Communication, Circuits, and Systems (IC3S);2023-05-26

2. Revival of Ferroelectric Memories Based on Emerging Fluorite‐Structured Ferroelectrics;Advanced Materials;2023-03-11

3. Structure, performance regulation and typical device applications of HfO<sub>2</sub>-based ferroelectric films;Acta Physica Sinica;2023

4. Achieving software-equivalent accuracy for hyperdimensional computing with ferroelectric-based in-memory computing;Scientific Reports;2022-11-10

5. MOx in ferroelectric memories;Metal Oxides for Non-volatile Memory;2022

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