A 130.7-$\hbox{mm}^{2}$ 2-Layer 32-Gb ReRAM Memory Device in 24-nm Technology-Reference-Cited by-同舟云学术

A 130.7-$\hbox{mm}^{2}$ 2-Layer 32-Gb ReRAM Memory Device in 24-nm Technology

Published:2014-01 Issue:1 Volume:49 Page:140-153
ISSN:0018-9200
Container-title:IEEE Journal of Solid-State Circuits
language:
Short-container-title:IEEE J. Solid-State Circuits

Author:

Liu Tz-yi,Yan Tian Hong,Scheuerlein Roy,Chen Yingchang,Lee Jeffrey KoonYee,Balakrishnan Gopinath,Yee Gordon,Zhang Henry,Yap Alex,Ouyang Jingwen,Sasaki Takahiko,Al-Shamma Ali,Chen Chinyu,Gupta Mayank,Hilton Greg,Kathuria Achal,Lai Vincent,Matsumoto Masahide,Nigam Anurag,Pai Anil,Pakhale Jayesh,Siau Chang Hua,Wu Xiaoxia,Yin Yibo,Nagel Nicolas,Tanaka Yoichiro,Higashitani Masaaki,Minvielle Tim,Gorla Chandu,Tsukamoto Takayuki,Yamaguchi Takeshi,Okajima Mutsumi,Okamura Takayuki,Takase Satoru,Inoue Hirofumi,Fasoli Luca

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/4/6690141/06605602.pdf?arnumber=6605602

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