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Mechanisms of conductive filament formation in hafnium oxide multilayer structures

  • Published:2023-09 Issue: Volume:781 Page:139993
  • ISSN:0040-6090
  • Container-title:Thin Solid Films
  • language:en
  • Short-container-title:Thin Solid Films

Author:

Isaev A.G.ORCID,Permyakova O.О.,Rogozhin A.Е.ORCID

Funder

Russian Academy of Sciences

Ministry of Education and Science of the Russian Federation

Valiev Institute of Physics and Technology of Yaroslavl Branch, Russian Academy of Sciences

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference17 articles.

1. Recent progress in resistive random access memories: materials, switching mechanisms, and performance;Pan;Mater. Sci. Eng. R. Rep.,2014

2. 10x10nm2 Hf/HfOx crossbar resistive RAM with excellent performance, reliability and low-energy operation;Govoreanu,2011

3. Memristor crossbar arrays with 6-nm half-pitch and 2-nm critical dimension;Pi;Nat. Nanotech.,2019

4. Sub-nanosecond switching of a tantalum oxide memristor;Torrezan;Nanotechnology,2011

5. A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures;Lee;Nat. Mater.,2011

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