AlGaN polarization-doped field effect transistor with compositionally graded channel from Al0.6Ga0.4N to AlN
Author:
Affiliation:
1. Sandia National Laboratories, Albuquerque, New Mexico 87185, USA
Funder
Sandia National Laboratories
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5058263
Reference19 articles.
1. High carrier concentration in high Al-composition AlGaN-channnel HEMTs
2. High Al Composition AlGaN-Channel High-Electron-Mobility Transistor on AlN Substrate
3. AlN/AlGaN HEMTs on AlN substrate for stable high‐temperature operation
4. AlN barrier HFETs with AlGaN channels to shift the threshold voltage to higher positive values: a proposal
5. Modeling of high composition AlGaN channel high electron mobility transistors with large threshold voltage
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