High carrier concentration in high Al-composition AlGaN-channnel HEMTs-Reference-Cited by-同舟云学术

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High carrier concentration in high Al-composition AlGaN-channnel HEMTs

Published:2011-11-17 Issue:2 Volume:9 Page:373-376
ISSN:1862-6351
Container-title:physica status solidi (c)
language:en
Short-container-title:Phys. Status Solidi C

Author:

Hashimoto Shin,Akita Katsushi,Yamamoto Yoshiyuki,Ueno Masaki,Nakamura Takao,Yafune Norimasa,Sakuno Keiichi,Tokuda Hirokuni,Kuzuhara Masaaki,Takeda Kenichiro,Iwaya Motoaki,Amano Hiroshi

Publisher

Wiley

Subject

Condensed Matter Physics

Cited by 21 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Band alignment and quality of Al0.6Ga0.4N/AlN films grown on diamond (111) substrate by remote N-plasma assisted MBE;Diamond and Related Materials;2023-06

2. Growth design for high quality AlxGa(1−x)N layer with high AlN-fraction on Si (1 1 1) substrate by MOCVD;Journal of Crystal Growth;2022-01

3. Ultrawide-bandgap AlGaN-based HEMTs for high-power switching;Journal of Computational Electronics;2020-06-17

4. High‐Temperature Operation of Al x Ga 1− x N ( x > 0.4) Channel Metal Oxide Semiconductor Heterostructure Field Effect Transistors with High‐ k Atomic Layer Deposited Gate Oxides;physica status solidi (a);2020-02-07

5. High-breakdown-voltage AlGaN-channel metal-insulator-semiconductor heterostructure field-effect transistors employing a quaternary AlGaInN barrier layer and an Al2O3 gate insulator;Journal of Vacuum Science & Technology B;2019-07

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