Design of indium-free nitride-based tunnel junction by polarization engineering
Author:
Funder
Ministry of Science and Technology, Taiwan
Publisher
Elsevier BV
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Biomaterials
Reference26 articles.
1. Lateral hydrogen diffusion at p-GaN layers in nitride-based light emitting diodes with tunnel junctions;Kuwano;Jpn. J. Appl. Phys.,2013
2. GaN-based vertical-cavity surface-emitting lasers with tunnel junction contacts grown by metal-organic chemical vapor deposition;Lee;APEX,2018
3. Demonstration of a III-nitride vertical-cavity surface-emitting laser with a III-nitride tunnel junction intracavity contact;Leonard;Appl. Phys. Lett.,2015
4. Cascaded GaN light-emitting diodes with hybrid tunnel junction layers;Chang;IEEE J. Quant. Electron.,2015
5. Numerical investigation of high-efficiency InGaN-based multijunction solar cell;Chang;IEEE Trans. Electron. Dev.,2013
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