Lateral Hydrogen Diffusion at p-GaN Layers in Nitride-Based Light Emitting Diodes with Tunnel Junctions-Reference-Cited by-同舟云学术

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Lateral Hydrogen Diffusion at p-GaN Layers in Nitride-Based Light Emitting Diodes with Tunnel Junctions

Published:2013-08-01 Issue:8S Volume:52 Page:08JK12
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kuwano Yuka,Kaga Mitsuru,Morita Takatoshi,Yamashita Kouji,Yagi Kouta,Iwaya Motoaki,Takeuchi Tetsuya,Kamiyama Satoshi,Akasaki Isamu

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference18 articles.

1. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer

2. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes

3. P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)

4. Influence of low-energy electron beam irradiation on defects in activated Mg-doped GaN

5. First-Principles Calculations on Mg Impurity and Mg-H Complex in GaN

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1. Design and Demonstration of MOCVD-Grown p-Type Al_xGa_1-xN/GaN Quantum Well Infrared Photodetector;IEEE Photonics Journal;2024-10

2. Breakdown Voltage and Leakage Current of the Nonuniformly Activated Lightly Doped p-GaN;IEEE Transactions on Electron Devices;2024-09

3. Advances in InGaN-based RGB micro-light-emitting diodes for AR applications: Status and perspective;APL Materials;2024-08-01

4. Ultraviolet-B Resonant-Cavity Light-Emitting Diodes with Tunnel Junctions and Dielectric Mirrors;ACS Photonics;2024-07-11

5. Tunnel junction-enabled monolithically integrated GaN micro-light emitting transistor;Applied Physics Letters;2024-05-27

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