Ultraviolet-B Resonant-Cavity Light-Emitting Diodes with Tunnel Junctions and Dielectric Mirrors-Reference-Cited by-同舟云学术

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Ultraviolet-B Resonant-Cavity Light-Emitting Diodes with Tunnel Junctions and Dielectric Mirrors

Published:2024-07-11 Issue:8 Volume:11 Page:2923-2929
ISSN:2330-4022
Container-title:ACS Photonics
language:en
Short-container-title:ACS Photonics

Author:

Torres Estrella¹^ORCID,Ciers Joachim¹^ORCID,Bergmann Michael A.¹^ORCID,Höpfner Jakob²,Graupeter Sarina²,Grigoletto Massimo²,Guttmann Martin³,Kolbe Tim³,Wernicke Tim²,Kneissl Michael²³,Haglund Åsa¹^ORCID

Affiliation:

1. Department of Microtechnology and Nanosciense, Chalmers University of Technology, 41296 Gothenburg, Sweden

2. Institute of Solid State Physics, Technische Universität Berlin, 10623 Berlin, Germany

3. Ferdinand-Braun-Institut (FBH), 12489 Berlin, Germany

Funder

Bundesministerium für Bildung und Forschung

Vetenskapsrådet

Deutsche Forschungsgemeinschaft

H2020 European Research Council

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsphotonics.4c00312

Reference34 articles.

1. The emergence and prospects of deep-ultraviolet light-emitting diode technologies

2. Schubert, E. F., Ed. Light-Emitting Diodes, 2nd ed. Cambridge University Press: Cambridge, 2006; p 255.

3. Violet semipolar (20-2-1) InGaN microcavity light-emitting diode with a 200 nm ultra-short cavity length

4. High efficiency blue InGaN microcavity light-emitting diode with a 205 nm ultra-short cavity

5. GaN-based resonant cavity micro-LEDs for AR application

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