Al0.87Ga0.13N/Al0.64Ga0.36N HFET with fT >17 GHz and Vbr > 360 V
Author:
Affiliation:
1. University of Wisconsin-Madison,Department of Electrical and Computer Engineering,Madison,WI,USA,53705
2. University of South Carolina,College of Engineering and Computing,Columbia,SC,USA,29208
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx8/10605129/10605242/10605249.pdf?arnumber=10605249
Reference8 articles.
1. Microelectronic engineering
2. AlGaN polarization-doped field effect transistor with compositionally graded channel from Al0.6Ga0.4N to AlN
3. Al0.75Ga0.25N/Al0.6Ga0.4N heterojunction field effect transistor with fT of 40 GHz
4. Record >10 MV/cm mesa breakdown fields in Al0.85Ga0.15N/Al0.6Ga0.4N high electron mobility transistors on native AlN substrates
5. Al0.64Ga0.36N channel MOSHFET on single crystal bulk AlN substrate
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