Al0.75Ga0.25N/Al0.6Ga0.4N heterojunction field effect transistor with fT of 40 GHz
Author:
Funder
Defense Advanced Research Projects Agency
Army Research Office
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://iopscience.iop.org/article/10.7567/1882-0786/ab1cf9/pdf
Reference32 articles.
1. High Al Composition AlGaN-Channel High-Electron-Mobility Transistor on AlN Substrate
2. First Operation of AlGaN Channel High Electron Mobility Transistors
3. High‐frequency performance of AlGaN channel HEMTs with high breakdown voltage
4. High Electron Mobility Transistors With Al0.65Ga0.35N Channel Layers on Thick AlN/Sapphire Templates
5. Doped Barrier Al0.65Ga0.35N/Al0.40Ga0.60N MOSHFET With SiO2 Gate-Insulator and Zr-Based Ohmic Contacts
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1. Al0.87Ga0.13N/Al0.64Ga0.36N HFET with fT >17 GHz and Vbr > 360 V;2024 Device Research Conference (DRC);2024-06-24
2. Al‐Rich AlGaN Channel High Electron Mobility Transistors on Silicon: A Relevant Approach for High Temperature Stability of Electron Mobility;Advanced Electronic Materials;2024-06-18
3. From wide to ultrawide-bandgap semiconductors for high power and high frequency electronic devices;Journal of Physics: Materials;2024-03-08
4. RF operation of AlN/Al0.25Ga0.75N/AlN HEMTs with f T /f max of 67/166 GHz;Applied Physics Express;2023-11-01
5. Band alignment and quality of Al0.6Ga0.4N/AlN films grown on diamond (111) substrate by remote N-plasma assisted MBE;Diamond and Related Materials;2023-06
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