High‐frequency performance of AlGaN channel HEMTs with high breakdown voltage
Author:
Affiliation:
1. Advanced Technology R&D CenterMitsubishi Electric Corporation8‐1‐1, Tsukaguchi‐HonmachiAmagasaki661‐8661HyogoJapan
Funder
New Energy and Industrial Technology Development Organization
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1049/el.2014.1874
Reference10 articles.
1. Gallium nitride based high power heterojunction field effect transistors: process development and present status at UCSB
2. 30-W/mm GaN HEMTs by Field Plate Optimization
3. First operation of AlGaN channel high electron mobility transistors;Nanjo T.;Appl. Phys. Express,2008
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3. RF operation in graded Al x Ga 1− x N ( x = 0.65 to 0.82) channel transistors;Electronics Letters;2018-11
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