First Operation of AlGaN Channel High Electron Mobility Transistors
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/1/i=1/a=011101/pdf
Reference5 articles.
1. Gallium nitride based high power heterojunction field effect transistors: process development and present status at UCSB
2. Highly Reliable 250 W GaN High Electron Mobility Transistor Power Amplifier
3. Improved Power Performance for a Recessed-Gate AlGaN–GaN Heterojunction FET With a Field-Modulating Plate
4. Ion implantation doping for AlGaN/GaN HEMTs
5. Highly resistive GaN layers formed by ion implantation of Zn along thecaxis
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1. RF operation of AlN/Al0.25Ga0.75N/AlN HEMTs with f T /f max of 67/166 GHz;Applied Physics Express;2023-11-01
2. Demonstration of N-Polar All-AlGaN High Electron Mobility Transistors With 375 mA/mm Drive Current;IEEE Electron Device Letters;2023-07
3. AlN/AlGaN/AlN quantum well channel HEMTs;Applied Physics Letters;2023-05-29
4. High Al-content AlGaN channel high electron mobility transistors on silicon substrate;e-Prime - Advances in Electrical Engineering, Electronics and Energy;2023-03
5. 24.4 W/mm X-Band GaN HEMTs on AlN Substrates With the LPCVD-Grown High-Breakdown-Field SiN x Layer;IEEE Journal of the Electron Devices Society;2023
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