Modeling of high composition AlGaN channel high electron mobility transistors with large threshold voltage
Author:
Affiliation:
1. Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210, USA
Funder
NSF DMR
ONR DEFINE MURI
OSU Wright Center for High Performance Power Electronics (CHPPE)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4905323
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