AlN/AlGaN HEMTs on AlN substrate for stable high‐temperature operation
Author:
Affiliation:
1. Graduate School of EngineeringUniversity of FukuiFukui910‐8507Japan
2. Sumitomo Electric Industries LtdItami664‐0016HyogoJapan
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1049/el.2013.2846
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4. First Operation of AlGaN Channel High Electron Mobility Transistors
5. High Al Composition AlGaN-Channel High-Electron-Mobility Transistor on AlN Substrate
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