Growth of a delta‐doped silicon layer by molecular beam epitaxy on a charge‐coupled device for reflection‐limited ultraviolet quantum efficiency
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.107675
Reference17 articles.
1. Low‐temperature Si molecular beam epitaxy: Solution to the doping problem
2. Limited thickness epitaxy in GaAs molecular beam epitaxy near 200 °C
3. Low‐temperature growth of Ge on Si(100)
4. Hydrogen-terminated silicon substrates for low-temperature molecular beam epitaxy
5. Silicon surface passivation by hydrogen termination: A comparative study of preparation methods
Cited by 80 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Surface Passivation by Quantum Exclusion: On the Quantum Efficiency and Stability of Delta-Doped CCDs and CMOS Image Sensors in Space;Sensors;2023-12-15
2. Solid‐state curved focal plane arrays realized with simple approaches for compact and high‐performance optical systems;Astronomische Nachrichten;2023-10
3. Optimizing silicon UV detector response with antireflection coatings, solar-blind bandpass filters and linear variable filters;Space Telescopes and Instrumentation 2022: Ultraviolet to Gamma Ray;2022-08-31
4. 2D-doped silicon detectors for UV/optical/NIR and x-ray astronomy;X-Ray, Optical, and Infrared Detectors for Astronomy X;2022-08-29
5. Characterization of low light performance of a CMOS Sensor for ultraviolet astronomical applications;X-Ray, Optical, and Infrared Detectors for Astronomy X;2022-08-29
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3