Hydrogen-terminated silicon substrates for low-temperature molecular beam epitaxy-Reference-Cited by-同舟云学术

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Hydrogen-terminated silicon substrates for low-temperature molecular beam epitaxy

Published:1989-12 Issue:1-2 Volume:183 Page:197-212
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Grunthaner P.J.,Grunthaner F.J.,Fathauer R.W.,Lin T.L.,Hecht M.H.,Bell L.D.,Kaiser W.J.,Schowengerdt F.D.,Mazur J.H.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference25 articles.

1. Unusually Low Surface-Recombination Velocity on Silicon and Germanium Surfaces

2. Infrared spectroscopy of Si(111) surfaces after HF treatment: Hydrogen termination and surface morphology

3. Infrared spectroscopy of Si(111) and Si(100) surfaces after HF treatment: Hydrogen termination and surface morphology

4. Investigations on hydrophilic and hydrophobic silicon (100) wafer surfaces by X-ray photoelectron and high-resolution electron energy loss-spectroscopy

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