Silicon surface passivation by hydrogen termination: A comparative study of preparation methods
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.343839
Reference18 articles.
1. Chemical and electronic structure of the SiO2/Si interface
2. Unusually Low Surface-Recombination Velocity on Silicon and Germanium Surfaces
3. Infrared spectroscopy of Si(111) surfaces after HF treatment: Hydrogen termination and surface morphology
4. The bonding of arsenic to the hydrogen-terminated Si(111) surface
5. Scanning tunneling microscopy characterization of the geometric and electronic structure of hydrogen‐terminated silicon surfaces
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