The bonding of arsenic to the hydrogen-terminated Si(111) surface
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Published:1988-07
Issue:4
Volume:6
Page:1132
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ISSN:0734-211X
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Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
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language:
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Short-container-title:J. Vac. Sci. Technol. B
Publisher
American Vacuum Society
Subject
General Engineering
Cited by
7 articles.
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1. Atomic structures of defects at GaSe/Si(111) heterointerfaces studied by scanning tunneling microscopy;Physical Review B;2004-03-17
2. Surface phases and nanostructures on silicon surface;Journal of Structural Chemistry;2004-01
3. Surface Phases and Processes on Si Surface;e-Journal of Surface Science and Nanotechnology;2004
4. Semiconductors, III-VI;Wiley Encyclopedia of Electrical and Electronics Engineering;1999-12-27
5. Arsenic passivation of Si and Ge surfaces;Critical Reviews in Solid State and Materials Sciences;1992-01