Surface Passivation by Quantum Exclusion: On the Quantum Efficiency and Stability of Delta-Doped CCDs and CMOS Image Sensors in Space
Author:
Hoenk Michael E.1, Jewell April D.1ORCID, Kyne Gillian1, Hennessy John1ORCID, Jones Todd1, Shapiro Charles1, Bush Nathan1, Nikzad Shouleh1, Morris David2, Lawrie Katherine2, Skottfelt Jesper3ORCID
Affiliation:
1. Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA 91109, USA 2. Teledyne e2v, Chelmsford CM1 2QU, UK 3. Centre for Electronic Imaging, School of Physical Sciences, The Open University, Milton Keynes MK7 6AA, UK
Abstract
Radiation-induced damage and instabilities in back-illuminated silicon detectors have proved to be challenging in multiple NASA and commercial applications. In this paper, we develop a model of detector quantum efficiency (QE) as a function of Si–SiO2 interface and oxide trap densities to analyze the performance of silicon detectors and explore the requirements for stable, radiation-hardened surface passivation. By analyzing QE data acquired before, during, and after, exposure to damaging UV radiation, we explore the physical and chemical mechanisms underlying UV-induced surface damage, variable surface charge, QE, and stability in ion-implanted and delta-doped detectors. Delta-doped CCD and CMOS image sensors are shown to be uniquely hardened against surface damage caused by ionizing radiation, enabling the stability and photometric accuracy required by NASA for exoplanet science and time domain astronomy.
Funder
NASA’s Strategic Astrophysics Technology Program
Subject
Electrical and Electronic Engineering,Biochemistry,Instrumentation,Atomic and Molecular Physics, and Optics,Analytical Chemistry
Reference59 articles.
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