Low‐temperature growth of Ge on Si(100)
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.104898
Reference17 articles.
1. Technological Prospects for Germanium Silicide Epitaxy
2. The influence of reconstruction on epitaxial growth: Ge on Si(100)-(2 × 1) and Si(111)-(7 × 7)
3. Novel strain-induced defect in thin molecular-beam epitaxy layers
4. Pseudomorphic growth of GexSi1−xon silicon by molecular beam epitaxy
5. Metastability in SiGe/Si Strained-Layer Structures
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