Self‐limitation in the surface segregation of Ge atoms during Si molecular beam epitaxial growth
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.106412
Reference16 articles.
1. Silicon/germanium strained layer superlattices
2. Growth temperature dependence of interfacial abruptness in Si/Ge heteroepitaxy studied by Raman spectroscopy and medium energy ion scattering
3. Surfactants in epitaxial growth
4. Ge segregation at Si/Si1−xGex interfaces grown by molecular beam epitaxy
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