Ge segregation at Si/Si1−xGex interfaces grown by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.101995
Reference5 articles.
1. Growth temperature dependence of interfacial abruptness in Si/Ge heteroepitaxy studied by Raman spectroscopy and medium energy ion scattering
2. Kinetics of solid phase crystallization in amorphous silicon
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