Peculiarities and evolution of Raman spectra of multilayer Ge/Si(001) heterostructures containing arrays of low‐temperature MBE‐grown Ge quantum dots of different size and number density: Experimental studies and numerical simulations
Author:
Affiliation:
1. A. M. Prokhorov General Physics Institute of the Russian Academy of Sciences Moscow Russia
2. Center for Photonics and 2D Materials Moscow Institute of Physics and Technology Dolgoprudny, Moscow Region Russia
Funder
Russian Foundation for Basic Research
Ministry of Science and Higher Education of the Russian Federation
Publisher
Wiley
Subject
Spectroscopy,General Materials Science
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/jrs.6314
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3. Vertical alignment control of self-ordered multilayered Ge nanodots on SiGe;Japanese Journal of Applied Physics;2023-02-07
4. Morphology and structure evolution of multilayered Ge/Si quantum dots grown by magnetron sputtering;Micro & Nano Letters;2023-02
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