Morphology and structure evolution of multilayered Ge/Si quantum dots grown by magnetron sputtering-Reference-Cited by-同舟云学术

Morphology and structure evolution of multilayered Ge/Si quantum dots grown by magnetron sputtering

Published:2023-02 Issue:2 Volume:18 Page:
ISSN:1750-0443
Container-title:Micro & Nano Letters
language:en
Short-container-title:Micro & Nano Letters

Author:

Shu Qijiang¹^ORCID,Huang Pengru²,Zhang Xicheng¹,Yang Linjing¹,Ye Donghai¹,Yang Li¹,Liu Hongxing¹,Chen Lei³⁴

Affiliation:

1. Institute of Information Yunnan University of Chinese Medicine Kunming China

2. School of Material Science & Engineering Guangxi Key Laboratory of Information Materials and Guangxi Collaborative Innovation Center of Structure and Property for New Energy and Materials Guilin University of Electronic Technology Guilin China

3. College of Chinese Materia Medica Yunnan University of Chinese Medicine Kunming China

4. Faculty of Narcotics Control Yunnan Police College Kunming China

Funder

National Natural Science Foundation of China

National Basic Research Program of China

Publisher

Institution of Engineering and Technology (IET)

Subject

Condensed Matter Physics,General Materials Science,Biomedical Engineering,Bioengineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/mna2.12158

Reference28 articles.

1. Germanium Quantum-Dot Array with Self-Aligned Electrodes for Quantum Electronic Devices

2. Lasing from Glassy Ge Quantum Dots in Crystalline Si

3. Electroluminescence of superatom-like Ge-core/Si-shell quantum dots by alternate field-effect-induced carrier injection

4. Near-Infrared Photoresponse in Ge/Si Quantum Dots Enhanced by Photon-Trapping Hole Arrays

5. All-quantum-dot emission tuning and multicolored optical films using layer-by-layer assembly method