Kinetics of solid phase crystallization in amorphous silicon-Reference-Cited by-同舟云学术

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Kinetics of solid phase crystallization in amorphous silicon

Published:1988-01 Issue:1 Volume:3 Page:1-77
ISSN:0920-2307
Container-title:Materials Science Reports
language:en
Short-container-title:Materials Science Reports

Author:

Olson G.L.,Roth J.A.

Publisher

Elsevier BV

Subject

General Engineering

Reference143 articles.

1. Ion implantation of silicon and germanium at room temperature. Analysis by means of 1.0-MeV helium ion scattering

2. Heat of crystallization and melting point of amorphous silicon

3. Calorimetric studies of crystallization and relaxation of amorphous Si and Ge prepared by ion implantation

4. THERMODYNAMICS OF EQUILIBRIUM AND NON-EQUILIBRIUM CRYSTALLIZATION OF Ge AND Si

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